The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 22, 2019

Filed:

May. 29, 2014
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Beijing Boe Optoelectronics Technology Co., Ltd., Beijing, CN;

Inventors:

Zongmin Tian, Beijing, CN;

Zhenyu Xie, Beijing, CN;

Xu Chen, Beijing, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 51/05 (2006.01); H01L 29/66 (2006.01); H01L 29/45 (2006.01); H01L 29/786 (2006.01); H01L 29/16 (2006.01); H01L 51/00 (2006.01); H01L 51/56 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3248 (2013.01); H01L 27/3246 (2013.01); H01L 27/3262 (2013.01); H01L 27/3274 (2013.01); H01L 29/1606 (2013.01); H01L 29/45 (2013.01); H01L 29/66045 (2013.01); H01L 29/66742 (2013.01); H01L 29/66969 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01); H01L 51/0048 (2013.01); H01L 51/5218 (2013.01); H01L 51/5221 (2013.01); H01L 51/56 (2013.01); H01L 51/0097 (2013.01); H01L 51/0545 (2013.01); H01L 51/0562 (2013.01); H01L 51/5206 (2013.01); H01L 51/5234 (2013.01); H01L 2227/323 (2013.01); H01L 2251/301 (2013.01); H01L 2251/5338 (2013.01);
Abstract

A thin film transistor, a method for manufacturing the thin film transistor, an array substrate comprising the thin film transistor and an organic light emitting display panel comprising the thin film transistor are provided. The thin film transistor at least comprising an active layer made of carbon nanotube material with semiconductor properties or graphene with semiconductor properties; further comprising a first conductive layer and a second conductive layer respectively located on upper and lower sides of the active layer and in contact with the active layer, the first conductive layer and the second conductive layer formed a secondary electron emitting layer with electron multiplication function. The thin film transistor is advantageous in its simple structure and simple manufacturing process.


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