Solid-state imaging element and method of manufacturing the same

Abstract

Provided are a solid-state imaging element which can be simply manufactured and can control movement of electric charges in an accumulation region with a high degree of accuracy, and a method of manufacturing the same. A solid-state imaging element () includes a substrate () having a first conductivity type; an accumulation region () having a second conductivity type and provided in the substrate (); a read-out region () for receiving the transferred electric charges accumulated in the accumulation region (); and a transfer section () for transferring the electric charges from the accumulation region () to the read-out region (). An impurity concentration modulation regionhaving a locally high concentration of an impurity having the second conductivity type, or having a locally low concentration of an impurity having the first conductivity type is formed in a part of the accumulation region (). An area of the impurity concentration modulation region () per unit distance with respect to the transfer section (), or a density of the discretely provided impurity concentration modulation region () increases with decreasing distance to the transfer section ().