The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2019
Filed:
Oct. 03, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Gae Hwang Lee, Seongnam-si, KR;
Kwang Hee Lee, Hwaseong-si, KR;
Kyu Sik Kim, Yongin-si, KR;
Sung Young Yun, Suwon-si, KR;
Dong-Seok Leem, Hwaseong-si, KR;
Yong Wan Jin, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
An image sensor includes a semiconductor substrate and a photoelectric conversion device on the semiconductor substrate and including a plurality of pixel electrodes, a light absorption layer, and a common electrode. The plurality of pixel electrodes may include a first pixel electrode and a second pixel electrode. The photoelectric conversion device may include a first photoelectric conversion region defined in an overlapping region with the first pixel electrode, the light absorption layer, and the common electrode, and a second photoelectric conversion region defined in an overlapping region with the second pixel electrode, the light absorption layer, and the common electrode. Sensitivity of the first photoelectric conversion region may be higher than sensitivity of the second photoelectric conversion region. An electronic device may include the image sensor.