The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2019
Filed:
Aug. 29, 2016
Applicants:
Patrick Hogan, Somerville, MA (US);
John Moore, Camarillo, CA (US);
Alex Brewer, Camarillo, CA (US);
Jared Pettit, Camarillo, CA (US);
Inventors:
Patrick Hogan, Somerville, MA (US);
John Moore, Camarillo, CA (US);
Alex Brewer, Camarillo, CA (US);
Jared Pettit, Camarillo, CA (US);
Assignees:
H.C. STARCK INC., Newton, MA (US);
DAETEC, LLC, Camarillo, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); C23F 1/16 (2006.01); H01L 27/12 (2006.01); C23F 1/02 (2006.01); H01L 29/66 (2006.01); H01L 21/283 (2006.01); H01L 29/49 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 21/3213 (2006.01); C23F 1/18 (2006.01); C23F 1/26 (2006.01); C23F 1/30 (2006.01); H01L 29/417 (2006.01); G02F 1/1343 (2006.01); G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1288 (2013.01); C23F 1/02 (2013.01); C23F 1/16 (2013.01); C23F 1/18 (2013.01); C23F 1/26 (2013.01); C23F 1/30 (2013.01); H01L 21/283 (2013.01); H01L 21/32134 (2013.01); H01L 21/32139 (2013.01); H01L 27/1218 (2013.01); H01L 27/1222 (2013.01); H01L 27/1296 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/4908 (2013.01); H01L 29/4958 (2013.01); H01L 29/66742 (2013.01); H01L 29/66765 (2013.01); H01L 29/78603 (2013.01); H01L 29/78669 (2013.01); G02F 1/1368 (2013.01); G02F 1/13439 (2013.01); G02F 2202/103 (2013.01);
Abstract
In various embodiments, etchants featuring (i) mixtures of hydrochloric acid, methanesulfonic acid, and nitric acid, or (ii) mixtures of phosphoric acid, methanesulfonic acid, and nitric acid, are utilized to etch metallic bilayers while minimizing resulting etch discontinuities between the layers of the bilayer.