The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2019
Filed:
Feb. 23, 2015
Lg Display Co., Ltd., Seoul, KR;
Youngjang Lee, Seoul, KR;
Kyungmo Son, Gyeonggi-do, KR;
Seongpil Cho, Gyeonggi-do, KR;
Jaehoon Park, Gyeonggi-do, KR;
Sohyung Lee, Gyeonggi-do, KR;
Sangsoon Noh, Gyeonggi-do, KR;
Moonho Park, Seoul, KR;
Sungjin Lee, Seoul, KR;
Seunghyo Ko, Seoul, KR;
Mijin Jeong, Seoul, KR;
LG Display Co., Ltd., Seoul, KR;
Abstract
Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed at a first area of the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at a second area of the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer disposed on an area of the substrate, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed: over the first gate electrode and the second gate electrode, and under the oxide semiconductor layer.