The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2019
Filed:
Sep. 02, 2016
Toshiba Memory Corporation, Minato-ku, JP;
Tadashi Iguchi, Yokkaichi, JP;
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Abstract
A semiconductor memory device according to an embodiment includes a memory cell array that includes memory cells and a plurality of first conducting layers. The memory cells are arrayed in a three-dimensional manner. The first conducting layers are connected to the memory cells and are arrayed in a laminating direction. Stepped wiring portion includes a plurality of second conducting layers. The plurality of second conducting layers connect the first conducting layers and external circuits. At least one of the plurality of second conducting layers includes a contact formation area on a top surface thereof in the stepped wiring portion positioned on the first side portion side. Other ones of the plurality of second conducting layers includes a contact formation area on a top surface thereof in the stepped wiring portion positioned on the second side portion side.