The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 22, 2019

Filed:

Nov. 09, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Min-jung Jin, Yongin-si, KR;

Sang-woo Pae, Seongnam-si, KR;

Hyun-min Choi, Uiwang-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/112 (2006.01); H01L 23/525 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); H01L 23/5252 (2013.01); H01L 29/7851 (2013.01); H01L 29/42376 (2013.01); H01L 29/495 (2013.01); H01L 29/517 (2013.01);
Abstract

A one time programmable (OTP) memory device, a method of manufacturing the same, and an electronic device including the same, which lower a programming voltage to enhance programming efficiency, increase reliability of peripheral input/output (I/O) elements used for a design of the OTP memory device, and simplify the design, are provided. The OTP memory device includes a transistor including one of a first gate structure including a high-k dielectric layer, a rare earth element (RE) supply layer, and a second metal layer, a second gate structure including the high-k dielectric layer, a first metal layer, and the second metal layer, and a third gate structure including the high-k dielectric layer and the second metal layer.


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