The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2019
Filed:
Aug. 31, 2017
Mitsubishi Electric Corporation, Tokyo, JP;
Hiroshi Tanaka, Tokyo, JP;
Mistubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device manufacturing method includes setting a local target thickness of any one of a semiconductor wafer and a film formed on the semiconductor wafer as a material to be etched by calculating a local thickness based on a thickness of the material to be etched at an end point detection position, and subtracting a predetermined relative etch amount from the local thickness to determine the local target thickness, and etching the material to be etched while monitoring the thickness thereof at the end point detection position, and ending the etching when the thickness of the material to be etched at the end point detection position is determined to become the local target thickness or less.