The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 22, 2019

Filed:

Sep. 01, 2015
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Tobias Gotschke, Nittendorf, DE;

Juergen Off, Regensburg, DE;

Korbinian Perzlmaier, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 21/02 (2006.01); C30B 25/04 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H01L 21/78 (2006.01); H01L 33/22 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 21/02639 (2013.01); C30B 25/04 (2013.01); C30B 25/18 (2013.01); C30B 29/406 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/78 (2013.01); H01L 33/007 (2013.01); H01L 33/0066 (2013.01); H01L 33/0095 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01);
Abstract

A method for producing a plurality of semiconductor chips and a semiconductor chip are disclosed. The method includes applying a mask material on a growth surface of a growth substrate, wherein the growth surface includes sapphire, patterning the mask material into a multiply-connected mask layer by introducing openings into the mask material, wherein the growth surface is exposed at the bottom of at least some of the openings, applying a semiconductor layer sequence on the mask layer and on the growth surface and singulating at least the semiconductor layer sequence into the plurality of semiconductor chips, wherein each semiconductor chip includes lateral dimensions and the lateral dimensions are large compared to an average distance of the openings to the nearest opening.


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