Methods of operating semiconductor memory devices and semiconductor memory devices

Abstract

In a method of operating a semiconductor memory device including a memory cell array and a control logic circuit configured to control access to the memory cell array, data synchronized with a differential data clock signal is received from an external memory controller, the data is stored in the memory cell array based on a frequency-divided data clock signal from which the differential data clock signal is divided, data is read from the memory cell array in response to a read command and a target address from the memory controller, and the read data is transmitted to the memory controller with one of a single strobe signal and a differential strobe signal according to a strobe mode of the semiconductor memory device.