The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2019
Filed:
Jan. 22, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Inventors:
Satoh Ryuichi, Numazu-si, JP;
Kyu Sik Kim, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); C23C 14/35 (2006.01); H01J 37/34 (2006.01); C23C 14/22 (2006.01); C23C 14/00 (2006.01); C23C 14/08 (2006.01);
U.S. Cl.
CPC ...
C23C 14/352 (2013.01); C23C 14/0068 (2013.01); C23C 14/086 (2013.01); C23C 14/225 (2013.01); H01J 37/3405 (2013.01); H01J 37/3417 (2013.01); H01J 37/3438 (2013.01); H01J 37/3447 (2013.01); H01J 37/3467 (2013.01);
Abstract
A method of forming a layer including disposing a first target and a second target to face each other with a first space therebetween, disposing a substrate to face the first space, generating plasma between the first target and the second target to perform sputtering on the substrate, disposing a capture net between the substrate and the the first space, and capturing anions and/or electrons that propagate toward the substrate from the first space.