The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 15, 2019

Filed:

Mar. 16, 2017
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Bayaner Arigong, San Jose, CA (US);

Richard Wilson, Morgan Hill, CA (US);

Haedong Jang, San Jose, CA (US);

Frank Trang, San Jose, CA (US);

Timothy Canning, Morgan Hill, CA (US);

Rongguo Zhou, Gilroy, CA (US);

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 7/20 (2006.01); H01L 29/78 (2006.01); H03H 7/18 (2006.01); H03H 7/19 (2006.01);
U.S. Cl.
CPC ...
H03H 7/20 (2013.01); H01L 29/7816 (2013.01); H03H 7/18 (2013.01); H03H 7/19 (2013.01);
Abstract

A phase shifter includes first and second RF terminals, a reference potential terminal; a lumped element LC network connected to the first and second RF terminals and the reference potential terminal, and first and second active semiconductor devices connected to the lumped element LC network and to the reference potential terminal. Each of the first and second active semiconductor devices include a control terminal and first and second output terminals. The lumped element LC network presents a reactance across the first and second RF terminals that shifts the phase of an RF signal as between the first and second RF terminals. The first and second active semiconductor devices are configured to tune the phase shift of the RF signal by controlling the reactance across the first and second RF terminals.


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