The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2019
Filed:
Oct. 21, 2016
Applicant:
Skyworks Solutions, Inc., Woburn, MA (US);
Inventors:
Michael Joseph McPartlin, North Andover, MA (US);
Bharatjeet Singh Gill, Ottawa, CA;
Assignee:
Skyworks Solutions, Inc., Woburn, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/44 (2006.01); H03F 1/30 (2006.01); H01L 23/31 (2006.01); H01L 25/00 (2006.01); H01L 23/00 (2006.01); H01L 23/373 (2006.01); H01L 23/367 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01); H03F 3/195 (2006.01); H03F 3/24 (2006.01); H01L 23/36 (2006.01); H01L 29/161 (2006.01); H01L 21/8222 (2006.01); H01L 23/528 (2006.01); H01L 23/66 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01); H03F 1/56 (2006.01); H03F 3/213 (2006.01); H04B 1/04 (2006.01); H04B 1/48 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/417 (2006.01); H01L 29/732 (2006.01); H03F 3/21 (2006.01); H04W 88/02 (2009.01);
U.S. Cl.
CPC ...
H03F 1/302 (2013.01); H01L 21/4853 (2013.01); H01L 21/4882 (2013.01); H01L 21/8222 (2013.01); H01L 23/3114 (2013.01); H01L 23/3142 (2013.01); H01L 23/3157 (2013.01); H01L 23/36 (2013.01); H01L 23/367 (2013.01); H01L 23/3675 (2013.01); H01L 23/3736 (2013.01); H01L 23/3738 (2013.01); H01L 23/49816 (2013.01); H01L 23/49844 (2013.01); H01L 23/528 (2013.01); H01L 23/5223 (2013.01); H01L 23/5286 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/66 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 25/50 (2013.01); H01L 27/0647 (2013.01); H01L 27/0658 (2013.01); H01L 28/20 (2013.01); H01L 28/40 (2013.01); H01L 29/1004 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/41708 (2013.01); H01L 29/7325 (2013.01); H03F 1/56 (2013.01); H03F 3/195 (2013.01); H03F 3/211 (2013.01); H03F 3/213 (2013.01); H03F 3/24 (2013.01); H03F 3/245 (2013.01); H04B 1/0475 (2013.01); H04B 1/44 (2013.01); H04B 1/48 (2013.01); H01L 2223/6655 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13647 (2013.01); H01L 2224/16227 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10271 (2013.01); H01L 2924/1207 (2013.01); H01L 2924/1305 (2013.01); H03F 2200/387 (2013.01); H03F 2200/447 (2013.01); H03F 2200/451 (2013.01); H04B 2001/0408 (2013.01); H04W 88/02 (2013.01);
Abstract
Metal pillars are placed adjacent to NPN transistor arrays that are used in the power amplifier for RF power generation. By placing the metal pillars in intimate contact with the silicon substrate, the heat generated by the NPN transistor arrays flows down into the silicon substrate and out the metal pillar. The metal pillar also forms an electrical ground connection in close proximity to the NPN transistors to function as a grounding point for emitter ballast resistors, which form an optimum electrothermal configuration for a linear SiGe power amplifier.