The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 15, 2019

Filed:

Jun. 22, 2011
Applicants:

Jean Scoyer, Herentals, BE;

Stijn Put, Olmen, BE;

Daniël Nelis, Peer, BE;

Kris Driesen, Hasselt, BE;

Inventors:

Jean Scoyer, Herentals, BE;

Stijn Put, Olmen, BE;

Daniël Nelis, Peer, BE;

Kris Driesen, Hasselt, BE;

Assignee:

UMICORE, Brussels, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/38 (2006.01); H01M 4/36 (2006.01); C01B 33/113 (2006.01); C01B 33/00 (2006.01); C01B 33/02 (2006.01); C01B 33/027 (2006.01); C01B 33/029 (2006.01); C01B 33/03 (2006.01); H01M 4/134 (2010.01); H01M 4/48 (2010.01); H01M 4/62 (2006.01); H01M 10/0525 (2010.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/366 (2013.01); C01B 33/00 (2013.01); C01B 33/02 (2013.01); C01B 33/027 (2013.01); C01B 33/029 (2013.01); C01B 33/03 (2013.01); C01B 33/113 (2013.01); H01M 4/134 (2013.01); H01M 4/38 (2013.01); H01M 4/386 (2013.01); H01M 4/483 (2013.01); H01M 4/628 (2013.01); H01M 10/0525 (2013.01); C01P 2004/62 (2013.01); C01P 2004/64 (2013.01); C01P 2006/40 (2013.01); H01M 2004/027 (2013.01); H01M 2220/30 (2013.01);
Abstract

A submicron sized Si based powder having an average primary particle size between 20 nm and 200 nm, wherein the powder has a surface layer comprising SiO, with 0<x<2, the surface layer having an average thickness between 0.5 nm and 10 nm, and wherein the powder has a total oxygen content equal or less than 3% by weight at room temperature. The method for making the powder comprises a step where a Si precursor is vaporized in a gas stream at high temperature, after which the gas stream is quenched to obtain Si particles, and the Si particles are quenched at low temperature in an oxygen containing gas.


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