The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 15, 2019

Filed:

Jul. 30, 2015
Applicants:

Citizen Electronics Co., Ltd., Yamanashi-ken, JP;

Citizen Watch Co., Ltd., Tokyo, JP;

Inventors:

Koki Hirasawa, Yamanashi-ken, JP;

Kazuki Matsumura, Yamanashi-ken, JP;

Takashi Iino, Yamanashi-ken, JP;

Assignees:

CITIZEN ELECTRONICS CO., LTD, Yamanashi-Ken, JP;

CITIZEN WATCH CO., LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/62 (2010.01); H01L 23/12 (2006.01); H01L 23/00 (2006.01); H01L 33/48 (2010.01); H01L 33/50 (2010.01); H01L 33/56 (2010.01); H01L 33/60 (2010.01); H01L 33/64 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 23/12 (2013.01); H01L 24/16 (2013.01); H01L 24/97 (2013.01); H01L 33/486 (2013.01); H01L 33/502 (2013.01); H01L 33/56 (2013.01); H01L 33/60 (2013.01); H01L 33/647 (2013.01); H01L 2224/16245 (2013.01); H01L 2224/95001 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/181 (2013.01); H01L 2924/3511 (2013.01); H01L 2924/37001 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A semiconductor device directly joins electrodes of a semiconductor element to electrodes of a metal substrate and has good yield, connection reliability, good mass productivity, and superior heat dissipation efficiency. A method for producing the semiconductor device that directly joins the electrodes of the metal substrate to the electrodes of the semiconductor element includes forming an electrode separating groove in an element mounting position on a main surface of the metal substrate at a predetermined depth. The semiconductor element is mounted to extend over the electrode separating groove. The metal substrate is ground from a surface reverse to the main surface of the metal substrate up to a position reaching the electrode separating groove.


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