The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2019
Filed:
Jul. 25, 2012
Daisuke Ide, Kobe, JP;
Takahiro Mishima, Kobe, JP;
Masato Shigematsu, Kobe, JP;
Toshiaki Baba, Kobe, JP;
Hiroyuki Mori, Kaiduka, JP;
Mitsuaki Morigami, Izumiotsu, JP;
Yuji Hishida, Kobe, JP;
Hitoshi Sakata, Higashi-Osaka, JP;
Ryo Goto, Kobe, JP;
Daisuke Ide, Kobe, JP;
Takahiro Mishima, Kobe, JP;
Masato Shigematsu, Kobe, JP;
Toshiaki Baba, Kobe, JP;
Hiroyuki Mori, Kaiduka, JP;
Mitsuaki Morigami, Izumiotsu, JP;
Yuji Hishida, Kobe, JP;
Hitoshi Sakata, Higashi-Osaka, JP;
Ryo Goto, Kobe, JP;
Abstract
An aspect of the invention provides a solar cell that comprises a semiconductor substrate having a light-receiving surface and a rear surface; a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type, the first semiconductor layer and the second semiconductor layer being formed on the rear surface, and a trench formed in the rear surface, wherein the first semiconductor layer is formed on the rear surface in which the trench is not formed, and the second semiconductor layer is formed on a side surface of the trench in an arrangement direction in which the first semiconductor layer and the second semiconductor layer are alternately arranged and on a bottom surface of the trench.