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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10181538 B1

PDFFull Text
Date of Patent:
Jan. 15, 2019

Filed:

Mar. 07, 2016

Quantum-dot-in-perovskite solids

Applicant:

The Governing Council of the University of Toronto, Toronto, CA;

Inventors:

Zhijun Ning, Shanghai, CN;

Xiwen Gong, Toronto, CA;

Riccardo Comin, Udine, IT;

Oleksandr Voznyy, Thornhill, CA;

Edward Sargent, Toronto, CA;

Assignee:

Other;

Attorney:

Hill & Schumacher

Primary Examiner:

Katie L Hammer

Int. Cl.
CPC ...
H01L 31/036 (2006.01); H01L 31/0352 (2006.01); H01L 31/028 (2006.01); H01L 31/0296 (2006.01); H01L 31/032 (2006.01); H01L 31/0368 (2006.01); C09K 11/02 (2006.01); C04B 35/515 (2006.01); C04B 35/553 (2006.01); C01G 21/06 (2006.01); C09K 11/66 (2006.01); H01L 51/42 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 31/035218 (2013.01); C01G 21/06 (2013.01); C04B 35/5152 (2013.01); C04B 35/553 (2013.01); C09K 11/02 (2013.01); C09K 11/661 (2013.01); H01L 31/028 (2013.01); H01L 31/0296 (2013.01); H01L 31/036 (2013.01); H01L 31/0324 (2013.01); H01L 31/0368 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C04B 2235/446 (2013.01); C04B 2235/768 (2013.01); C04B 2235/80 (2013.01); H01L 51/426 (2013.01); Y10S 977/774 (2013.01); Y10S 977/892 (2013.01); Y10S 977/932 (2013.01);
Abstract

The present disclosure provides a composite material of a pre-formed crystalline or polycrystalline semiconductor particles embedded in a crystalline or polycrystalline perovskite matrix material. The pre-formed crystalline or polycrystalline semiconductor particles and and crystalline or polycrystalline perovskite being selected so that any lattice mismatch between the two lattices does not exceed about 10%. The pre-formed crystalline or polycrystalline semiconductor particles and said crystalline or polycrystalline perovskite matrix material have lattice planes that are substantially aligned.

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