The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 15, 2019

Filed:

Jan. 03, 2017
Applicant:

Chunghwa Picture Tubes, Ltd., Taoyuan, TW;

Inventors:

Chin-Tzu Kao, Changhua County, TW;

Chung-Hsu Wang, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 21/4763 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/47635 (2013.01); H01L 29/42356 (2013.01); H01L 29/66969 (2013.01); H01L 29/78606 (2013.01);
Abstract

The invention relates to a thin-film transistor and a manufacturing method thereof. The manufacturing method of the thin-film transistor includes the following steps: an insulating layer is formed to cover a gate on a substrate; a semiconductor pattern having a first region and a second region is formed on the insulating layer; a plurality of island patterns is formed, wherein at least a portion of the plurality of island patterns is disposed on the semiconductor pattern, and the plurality of island patterns is separated from one another by a gap; and a source and a drain are formed to cover a portion of the plurality of island patterns and fill the gaps to respectively be electrically connected to the first region and the second region of the semiconductor pattern.


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