IDiyas

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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10181515 B1

PDFFull Text
Date of Patent:
Jan. 15, 2019

Filed:

Feb. 17, 2017

Semiconductor device

Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Mariko Suzuki, Yokohama, JP;

Tadashi Sakai, Yokohama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Angel Roman

Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/47 (2006.01); H01L 29/40 (2006.01); H01L 29/872 (2006.01); H01L 29/36 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 29/66 (2006.01); H01L 29/732 (2006.01); H01L 29/861 (2006.01); H01L 29/868 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1602 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 29/0657 (2013.01); H01L 29/1608 (2013.01); H01L 29/36 (2013.01); H01L 29/402 (2013.01); H01L 29/404 (2013.01); H01L 29/47 (2013.01); H01L 29/6603 (2013.01); H01L 29/66037 (2013.01); H01L 29/66234 (2013.01); H01L 29/732 (2013.01); H01L 29/868 (2013.01); H01L 29/8613 (2013.01); H01L 29/872 (2013.01); H01L 29/66272 (2013.01);
Abstract

Provided is a semiconductor device according to an embodiment including an i-type or first-conductivity-type first diamond semiconductor layer having a first side surface, a second-conductivity-type second diamond semiconductor layer provided on the first diamond semiconductor layer and having a second side surface, a third diamond semiconductor layer being in contact with the first side surface and the second side surface, the third diamond semiconductor containing nitrogen, a first electrode electrically connected to the first diamond semiconductor layer, and a second electrode electrically connected to the second diamond semiconductor layer.

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