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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10181497 B1

PDFFull Text
Date of Patent:
Jan. 15, 2019

Filed:

Jan. 19, 2017

Optoelectronic device, and image sensor and electronic device including the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Sung Heo, Suwon-si, KR;

Kyu Sik Kim, Yongin-si, KR;

Nam Jeong Kim, Gwangju-si, KR;

Seong Heon Kim, Seongnam-si, KR;

Yongsung Kim, Suwon-si, KR;

Eunae Cho, Seoul, KR;

Takkyun Ro, Hwaseong-si, KR;

Dongjin Yun, Pohang-si, KR;

Yongsu Kim, Seongnam-si, KR;

Wenxu Xianyu, Suwon-si, KR;

Yong-Young Park, Hwaseong-si, KR;

Kyung Bae Park, Hwaseong-si, KR;

Assignee:

Samsung Electronics, Ltd., Gyeonggi-Do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Michelle Mandala

Int. Cl.
CPC ...
H01L 27/30 (2006.01); H01L 51/44 (2006.01); H01L 51/50 (2006.01); H01L 51/52 (2006.01); H01L 27/146 (2006.01); H01L 51/56 (2006.01); H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
H01L 27/307 (2013.01); H01L 27/14621 (2013.01); H01L 27/301 (2013.01); H01L 51/42 (2013.01); H01L 51/441 (2013.01); H01L 51/5092 (2013.01); H01L 51/5096 (2013.01); H01L 51/5203 (2013.01); H01L 51/56 (2013.01); H01L 51/5088 (2013.01); H01L 2251/552 (2013.01);
Abstract

An optoelectronic device includes a first electrode and a second electrode facing each other a photoelectric conversion layer between the first electrode and the second electrode and a buffer layer between the photoelectric conversion layer and the second electrode. The buffer layer includes a nitride. The nitride includes one of silicon nitride (SiN, 0<x<1), silicon oxynitride (SiON, 0<y<0.5, 0<z<1), and a combination thereof.

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