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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10181450 B1

PDFFull Text
Date of Patent:
Jan. 15, 2019

Filed:

Feb. 01, 2017

Method of manufacturing semiconductor device

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Seiya Isozaki, Tokyo, JP;

Takashi Moriyama, Tokyo, JP;

Takehiko Maeda, Gunma, JP;

Assignee:

Renesas Electronics Corporation, Tokyo, JP;

Attorney:

Mattingly & Malur, PC

Primary Examiner:

Andres Munoz

Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H01L 24/43 (2013.01); H01L 21/4853 (2013.01); H01L 23/4952 (2013.01); H01L 23/49582 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/27 (2013.01); H01L 24/33 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 24/45 (2013.01); H01L 24/49 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/3303 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/49171 (2013.01); H01L 2224/73215 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/78301 (2013.01); H01L 2224/8385 (2013.01); H01L 2224/85181 (2013.01); H01L 2224/92247 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01);
Abstract

A pad formed in a semiconductor chip is formed such that a thickness of an aluminum film in a wire bonding portion is smaller than that of an aluminum film in a peripheral portion covered with a protective film. On the other hand, a thickness of a wiring formed in the same step as the pad is larger than that of the pad in the wire bonding portion. The main conductive film of the pad in the wire bonding portion is comprised of only one layer of a first aluminum film, while the main conductive film of the wiring is comprised of at least two layers of aluminum films (the first aluminum film and a second aluminum film) in any region of the wiring.

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Isozaki, Seiya. (2019). Method of manufacturing semiconductor device (U.S. Patent No. 10181450). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10181450

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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