The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2019
Filed:
Oct. 20, 2017
Applicant:
SK Hynix Inc., Icheon, KR;
Inventor:
Hyun-Seok Kang, Seoul, KR;
Assignee:
SK HYNIX INC., Icheon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 43/08 (2006.01); H01L 23/528 (2006.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01); H01L 27/11507 (2017.01); H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01L 45/00 (2006.01); G06F 12/0868 (2016.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); G06F 12/0868 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 27/11507 (2013.01); H01L 27/224 (2013.01); H01L 27/2418 (2013.01); H01L 27/2427 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); H01L 45/06 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/16 (2013.01); G06F 2212/225 (2013.01); G06F 2212/6042 (2013.01);
Abstract
An electronic device includes a semiconductor memory, wherein the semiconductor memory may include: a cell mat disposed over a substrate, the cell mat including a plurality of memory cells; an insulating layer disposed over the cell mat; a conductive pattern disposed over the insulating layer, the conductive pattern overlapping a first portion of the cell mat without overlapping a second portion of the cell mat; and a shielding layer disposed in the insulating layer, the shielding layer overlapping at least the second portion of the cell mat, the shielding layer being capable of blocking plasma.