The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2019
Filed:
Feb. 18, 2016
Sean R. Kirkpatrick, Littleton, MA (US);
Allen R. Kirkpatrick, Carlisle, MA (US);
Michael J. Walsh, Billerica, MA (US);
Richard C. Svrluga, Cambridge, MA (US);
Sean R. Kirkpatrick, Littleton, MA (US);
Allen R. Kirkpatrick, Carlisle, MA (US);
Michael J. Walsh, Billerica, MA (US);
Richard C. Svrluga, Cambridge, MA (US);
EXOGENESIS CORPORATION, Billerica, MA (US);
Abstract
A method of treating a surface of a silicon substrate forms an accelerated gas cluster ion beam of carbon atoms, promotes fragmentation and/or dissociation of gas cluster ions in the beam, removes charged particles from the beam to form a neutral beam, and treats a portion of a surface of the silicon substrate by irradiating it with the neutral beam. A silicon substrate surface layer of SiC(0.05<X<3) formed by accelerated and focused Neutral Beam irradiation of a silicon substrate wherein the Neutral Beam is derived from a gas cluster ion beam which has had its cluster ions dissociated and charged particles removed.