The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 15, 2019

Filed:

Feb. 02, 2015
Applicant:

Robert Bosch Gmbh, Stuttgart, DE;

Inventors:

Walter Daves, Singapore, SG;

Michael Badeja, Reutlingen, DE;

Assignee:

Robert Bosch GmbH, Stuttgart, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/113 (2006.01); G01L 9/00 (2006.01); B81C 1/00 (2006.01); B81B 3/00 (2006.01);
U.S. Cl.
CPC ...
G01L 9/0045 (2013.01); B81B 3/0097 (2013.01); B81C 1/00158 (2013.01); B81C 1/00246 (2013.01); H01L 41/1138 (2013.01); B81B 2201/0264 (2013.01); B81B 2203/0127 (2013.01); B81B 2207/015 (2013.01); B81C 2203/0771 (2013.01);
Abstract

A pressure sensor has a substrate and a transistor structure. The substrate has a cavity formed in the substrate. The transistor structure is arranged above the cavity. The transistor structure has a flexible heterostructure and at least one source contact, drain contact, and gate contact each connected to the heterostructure in an electrically conductive manner. The heterostructure is configured to assume a position corresponding to a pressure ratio between a first pressure in the cavity and a second pressure on a side of the heterostructure opposite the cavity. The transistor structure is configured to provide an electrical signal corresponding to the position.


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