The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2019
Filed:
Jul. 28, 2017
Applicant:
Skyworks Solutions, Inc., Woburn, MA (US);
Inventor:
Thomas William Arell, Basking Ridge, NJ (US);
Assignee:
SKYWORKS SOLUTIONS, INC., Woburn, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03G 3/30 (2006.01); H03F 1/52 (2006.01); H03F 3/193 (2006.01); H03F 3/195 (2006.01); H03G 7/00 (2006.01); H03G 11/00 (2006.01);
U.S. Cl.
CPC ...
H03F 1/523 (2013.01); H03F 3/193 (2013.01); H03F 3/195 (2013.01); H03G 7/00 (2013.01); H03G 11/00 (2013.01); H03F 2200/211 (2013.01); H03F 2200/444 (2013.01); H03F 2200/451 (2013.01);
Abstract
A limiter circuit is integrated into an RF power amplifier. The limiter circuit automatically starts adding attenuation at the input of the RF power amplifier after a predetermined input power level threshold is exceeded, thereby extending the safe input drive level to protect the amplifier. In a preferred embodiment of the invention, the limiter circuit is implemented using a pseudomorphic high electron mobility transistor (PHEMT) device or a metal semiconductor field effect transistor (MESFET) device. Diode connected transistors or Schottky diodes may also be used in the limiter circuit.