The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2019

Filed:

Jul. 30, 2014
Applicant:

Hewlett Packard Enterprise Development Lp, Houston, TX (US);

Inventors:

Gary Gibson, Palo Alto, CA (US);

James Elmer Abbott, Jr., Albany, OR (US);

Zhiyong Li, Foster City, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); C22C 5/04 (2006.01); C22C 27/02 (2006.01); C22C 27/04 (2006.01); C22C 30/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/128 (2013.01); C22C 5/04 (2013.01); C22C 27/02 (2013.01); C22C 27/04 (2013.01); C22C 30/00 (2013.01); H01L 27/2427 (2013.01); H01L 27/2436 (2013.01); H01L 27/2463 (2013.01); H01L 45/08 (2013.01); H01L 45/085 (2013.01); H01L 45/1206 (2013.01); H01L 45/1226 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/142 (2013.01); H01L 45/143 (2013.01); H01L 45/146 (2013.01); H01L 45/148 (2013.01); H01L 45/16 (2013.01);
Abstract

A non-volatile memory device includes two electrodes and an active region disposed between and in electrical contact with the electrodes. The active region contains a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field. The electrode is an amorphous conductive material comprising 5 to 90 at % of a first metal, 5 to 90 at % of a second metal, and 5 to 90 at % of a metalloid, wherein the metalloid is any of carbon, silicon, and boron. The metalloid, the first metal, and the second metal account for at least 70 at % of the amorphous conductive material.


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