The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2019

Filed:

Sep. 26, 2017
Applicants:

Benjamin J. Taylor, Escondido, CA (US);

Teresa H. Emery, San Diego, CA (US);

Susan Anne Elizabeth Berggren, San Diego, CA (US);

Anna M. Leese DE Escobar, Encinitas, CA (US);

Inventors:

Benjamin J. Taylor, Escondido, CA (US);

Teresa H. Emery, San Diego, CA (US);

Susan Anne Elizabeth Berggren, San Diego, CA (US);

Anna M. Leese de Escobar, Encinitas, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 39/22 (2006.01); H01B 12/02 (2006.01); H01L 21/02 (2006.01); B82Y 99/00 (2011.01);
U.S. Cl.
CPC ...
H01L 39/223 (2013.01); H01B 12/02 (2013.01); H01L 21/02019 (2013.01); B82Y 99/00 (2013.01);
Abstract

A Josephson junction device and methods for manufacture can include an untwinned YBaCuOnanowire having crystallographic a- and b-axes. The nanowire can be established from YBaCuOfilm (6.0≤x≤7.0) using a photolithography process, followed by an ion milling process, to yield the YBaCuOnanowire. The crystallographic b-axis of the nanowire can be parallel to the long dimension of the nanowire. First and second gate structures can be placed on opposite sides of the nanowire across from each other, to establish first and second microgaps. A gate voltage can be selectively applied across the first and said second gate structures, which can further establish a selective electric field across the first and second microgaps. The electric field can be parallel to the nanowire crystallographic a-axis, to selectively cause an at will Josephson junction effect.


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