The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2019
Filed:
Jul. 05, 2017
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Kengo Nagata, Kiyosu, JP;
Taiji Yamamoto, Kiyosu, JP;
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-ken, JP;
Abstract
There is provided a Group III nitride semiconductor light-emitting device exhibiting improved crystallinity while suppressing abnormal growth of semiconductor layer due to pits and a production method therefor. In forming an n-side electrostatic breakdown preventing layer, pits are generated from the n-side electrostatic breakdown preventing layer. In forming an n-side superlattice layer, the layer is formed by alternately depositing a first InGaN layer and a GaN layer having an In composition ratio lower than that of the first InGaN layer, so that the In composition ratio and the total thickness of the first InGaN layers satisfy the following equation: 0<Y≤180X+22, 0<X≤0.1, X: In composition ratio of InGaN layers, and Y: Total thickness of InGaN layers (nm).