The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2019

Filed:

Nov. 19, 2015
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Yong Jun Kim, Seoul, KR;

Sung Wook Moon, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01); H01L 33/04 (2010.01); H01L 33/30 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/0025 (2013.01); H01L 33/0079 (2013.01); H01L 33/04 (2013.01); H01L 33/30 (2013.01); H01L 33/32 (2013.01); H01L 33/405 (2013.01); H01L 33/22 (2013.01);
Abstract

A red light emitting device, a fabricating method of the light emitting device, a light emitting device package and a lighting system are provided. The red light emitting device according to an embodiment may include a first conductive type first semiconductor layer; an active layeron the first conductive type first semiconductor layer; a second conductive type third semiconductor layeron the active layer; a second conductive type fourth semiconductor layeron the second conductive type third semiconductor layer; and a second conductive type fifth semiconductor layeron the second conductive type fourth semiconductor layer. The second conductive type fifth semiconductor layermay include a superlattice structure of a GaP layer/InGaP layer (0≤x≤1)


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