The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2019

Filed:

Nov. 23, 2016
Applicants:

A. Paul Alivisatos, Berkeley, CA (US);

Miquel Salmeron, Kensington, CA (US);

Yingjie Zhang, Urbana, IL (US);

Daniel J. Hellebusch, Oakland, CA (US);

Inventors:

A. Paul Alivisatos, Berkeley, CA (US);

Miquel Salmeron, Kensington, CA (US);

Yingjie Zhang, Urbana, IL (US);

Daniel J. Hellebusch, Oakland, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/09 (2006.01); H01L 31/18 (2006.01); H01L 31/0296 (2006.01); H01L 31/0368 (2006.01); H01L 31/113 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1872 (2013.01); H01L 31/02963 (2013.01); H01L 31/0368 (2013.01); H01L 31/09 (2013.01); H01L 31/1136 (2013.01); H01L 31/1836 (2013.01); H01L 31/1892 (2013.01); Y02E 10/50 (2013.01);
Abstract

This disclosure provides systems, methods, and apparatus related to photodetectors. In one aspect, a photodetector device comprises a substrate, a polycrystalline layer disposed on the substrate, and a first electrode and a second electrode disposed on the polycrystalline layer. The polycrystalline layer comprises nanograins with grain boundaries between the nanograins. The nanograins comprise a semiconductor material. A doping element comprising a halogen is segregated at the grain boundaries. A length of the polycrystalline layer is between and separating the first electrode and the second electrode.


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