The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2019
Filed:
Mar. 09, 2018
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Nariaki Tanaka, Kiyosu, JP;
Tohru Oka, Kiyosu, JP;
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
A semiconductor device having a trench gate structure is configured to include a first n-type semiconductor layer, a p-type semiconductor layer, a trench, an insulating film, a gate electrode, a source electrode and a drain electrode. The first n-type semiconductor layer includes a p-type impurity-containing region configured to contain a p-type impurity at a higher concentration than an n-type impurity. The p-type impurity-containing region is arranged to adjoin the p-type semiconductor layer. In a stacking direction of the first n-type semiconductor layer and the p-type semiconductor layer, the p-type impurity-containing region is provided at a position that does not at least partly overlap with the source electrode and that overlaps with an outer periphery of a bottom face of the trench. This configuration suppresses an increase in capacity between the drain and the source, while improving the breakdown voltage of the semiconductor device.