The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2019
Filed:
Jul. 11, 2016
Applicant:
Mediatek Inc., Hsin-Chu, TW;
Inventors:
Assignee:
MEDIATEK INC., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 29/36 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0653 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 29/36 (2013.01); H01L 29/402 (2013.01); H01L 29/404 (2013.01); H01L 29/42356 (2013.01); H01L 29/7835 (2013.01);
Abstract
The electronic component includes a semiconductor substrate, a first doped region, a second doped region, a gate structure, a dielectric layer and a conductive portion. The semiconductor substrate has an upper surface. first doped region embedded in the semiconductor substrate. The second doped region is embedded in the semiconductor substrate. The gate structure is formed on the upper surface. The dielectric layer is formed above the upper surface and located between the first doped region and the second doped region. The conductive portion is formed on the dielectric layer.