The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2019
Filed:
Jun. 29, 2017
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Shuhei Tatemichi, Matsumoto, JP;
Shunji Takenoiri, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Abstract
A semiconductor device, including a semiconductor layer of a first conductivity type, and a parallel pn layer formed on a surface of the semiconductor layer. The parallel pn layer includes a plurality of first semiconductor regions of the first conductivity type, and a plurality of second semiconductor regions of a second conductivity type. The first and second semiconductor regions are alternatingly arranged in a direction parallel to the surface of the semiconductor layer. Each second semiconductor region has at least one first region that is a region having a group 18 element introduced therein.