The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2019

Filed:

Jul. 27, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Youngbeom Pyon, Suwon-si, KR;

Kichul Park, Changwon-si, KR;

Inkwon Kim, Hwaseong-si, KR;

Ki Hoon Jang, Hwaseong-si, KR;

Byoungho Kwon, Hwaseong-si, KR;

Sangkyun Kim, Hwasoeng-si, KR;

Boun Yoon, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/528 (2006.01); H01L 27/112 (2006.01); H01L 23/535 (2006.01); H01L 27/11551 (2017.01); H01L 27/11578 (2017.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11286 (2013.01); H01L 23/528 (2013.01); H01L 23/535 (2013.01); H01L 27/112 (2013.01); H01L 27/11551 (2013.01); H01L 27/11578 (2013.01); H01L 21/02107 (2013.01); H01L 21/76801 (2013.01); H01L 23/538 (2013.01);
Abstract

A semiconductor device includes a substrate, a peripheral structure, a lower insulating layer, and a stack. The substrate includes a peripheral circuit region and a cell array region. The peripheral structure is on the peripheral circuit region. The lower insulating layer covers the peripheral circuit region and the cell array region and has a protruding portion protruding from a flat portion. The stack is on the lower insulating layer and the cell array region, and includes upper conductive patterns and insulating patterns which are alternately and repeatedly stacked.


Find Patent Forward Citations

Loading…