The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2019
Filed:
Mar. 03, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/823431 (2013.01); H01L 29/0649 (2013.01); H01L 29/42376 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7856 (2013.01);
Abstract
A semiconductor device includes at least one first gate structure and at least one second gate structure on a semiconductor substrate. The at least one first gate structure has a flat upper surface extending in a first direction and a first width in a second direction perpendicular to the first direction. The at least one second gate structure has a convex upper surface extending in the first direction and a second width in the second direction, the second width being greater than the first width.