The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2019

Filed:

Apr. 25, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Hui Zang, Guilderland, NY (US);

Josef Watts, Saratoga Springs, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01); H01L 21/28 (2006.01); H01L 27/092 (2006.01); H01L 25/07 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823437 (2013.01); H01L 21/28247 (2013.01); H01L 21/31111 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 27/0924 (2013.01); H01L 27/10879 (2013.01); H01L 29/7831 (2013.01);
Abstract

A method includes providing a semiconductor structure having a substrate and a plurality of fins extending upwards from the substrate. A CT pillar layer is disposed over the semiconductor structure. A CT mask is lithographically patterned over the CT pillar layer. The CT mask is anisotropically etched to remove exposed portions of the CT pillar layer and to form a CT pillar between the fins. A dummy gate structure is disposed across the CT pillar. The dummy gate structure is replaced with first and second metal gate structures that are electrically isolated from each other by the CT pillar.


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