The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2019

Filed:

Oct. 23, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Robert J. Fox, III, Greenfield Center, NY (US);

Sunil K. Singh, Mechanicville, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/76828 (2013.01); H01L 21/76835 (2013.01); H01L 21/76852 (2013.01); H01L 23/5226 (2013.01); H01L 23/53295 (2013.01);
Abstract

Interconnect structures and methods for forming an interconnect structure. A sacrificial layer is formed on a substrate and an interconnect opening is formed that extends vertically through the sacrificial layer into the substrate. The interconnect opening is filled with a conductor to form a conductive feature. After filling the interconnect opening with the conductor, a dielectric layer is formed on the sacrificial layer. After the dielectric layer is formed on the sacrificial layer, the sacrificial layer is removed to form an air gap layer arranged vertically between the dielectric layer and the substrate.


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