The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2019

Filed:

Jul. 05, 2017
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventor:

Chun Yan, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01); H01L 21/673 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67225 (2013.01); H01J 37/3211 (2013.01); H01J 37/3244 (2013.01); H01J 37/32091 (2013.01); H01L 21/67389 (2013.01); H01L 21/6833 (2013.01); H01J 37/32798 (2013.01); H01J 37/32862 (2013.01); H01J 2237/334 (2013.01);
Abstract

Embodiments of the present disclosure provide methods for conditioning a plasma processing chamber to maintain a reliable and predicable processing conditions while performing a oxide removal process on a substrate. In one embodiment, a method for conditioning a plasma processing chamber includes supplying a first gas mixture including an inert gas into a processing chamber a first period of time in absent of a substrate, supplying a second gas mixture including an inert gas, a hydrogen containing gas and a halogen containing gas for a second period of time in absent of the substrate, and supplying a third gas mixture including an inert gas and a hydrogen containing gas for a third period of time in absent of the substrate in the processing chamber.


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