The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2019
Filed:
Apr. 12, 2016
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
NIPPON TELEGRAPH AND TELEPHONE CORPORATION, Tokyo, JP;
Abstract
A third semiconductor layer () including a third nitride semiconductor is provided between an electrode () and a second semiconductor layer () including a second nitride semiconductor. The band gap of the second nitride semiconductor is set such that the carrier movement between a first semiconductor layer () and the third semiconductor layer () via the second semiconductor layer () is rate-determined by a diffusion process. The thickness of the second semiconductor layer () is set such that the carrier movement between the first semiconductor layer () and the third semiconductor layer () via the second semiconductor layer () is rate-determined by the diffusion process. The carrier movement between the first semiconductor layer () and the third semiconductor layer () via the second semiconductor layer () is rate-determined by a field emission process.