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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10176981 B1

PDFFull Text
Date of Patent:
Jan. 08, 2019

Filed:

Mar. 01, 2018

Semiconductor device and semiconductor device manufacturing method

Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Katsunori Ueno, Matsumoto, JP;

Kiyokazu Nakagawa, Kofu, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:

Jack Chen

Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); C23C 16/40 (2006.01); H01L 29/12 (2006.01); H01L 29/45 (2006.01); H01L 21/265 (2006.01); H01L 29/36 (2006.01); H01L 29/267 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02164 (2013.01); C23C 16/402 (2013.01); H01L 21/02208 (2013.01); H01L 21/02274 (2013.01); H01L 21/28264 (2013.01); H01L 29/12 (2013.01); H01L 29/2003 (2013.01); H01L 29/495 (2013.01); H01L 29/51 (2013.01); H01L 29/66522 (2013.01); H01L 29/66712 (2013.01); H01L 29/78 (2013.01); H01L 29/7802 (2013.01); H01L 21/26546 (2013.01); H01L 29/267 (2013.01); H01L 29/36 (2013.01); H01L 29/452 (2013.01);
Abstract

If a SiOfilm is formed on a semiconductor substrate using TEOS (tetraethylorthosilicate: Si(OCH)), carbon (C) may be mixed in the SiOfilm in some cases. In a SiOfilm, carbon may function as fixed charges. For example, if carbon (C) is mixed in a SiOfilm as a gate insulating film of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), the gate threshold voltage (V) may fluctuate. A semiconductor device using a gallium nitride semiconductor layer is provided. The semiconductor device includes: a silicon dioxide film that is provided at least partially in direct contact with the gallium nitride semiconductor layer and has impurity atoms, wherein the silicon dioxide film contains as the impurity atoms: carbon at concentration higher than 0 cmand lower than 2E+18 cm; and gallium at concentration equal to or lower than 1E+17 cm.

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