The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2019

Filed:

Jul. 23, 2015
Applicant:

Sharp Kabushiki Kaisha, Sakai, Osaka, JP;

Inventors:

Hidenobu Kimoto, Sakai, JP;

Tetsuya Tarui, Sakai, JP;

Yoshihiro Seguchi, Sakai, JP;

Takehisa Sugimoto, Sakai, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09F 9/00 (2006.01); G09F 9/30 (2006.01); G09G 3/36 (2006.01); H01L 27/12 (2006.01); H01L 29/49 (2006.01); G02F 1/1333 (2006.01); G02F 1/1343 (2006.01); G02F 1/1345 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 21/3205 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
G02F 1/133345 (2013.01); G02F 1/1368 (2013.01); G02F 1/13458 (2013.01); G02F 1/134336 (2013.01); G02F 1/136286 (2013.01); G09F 9/00 (2013.01); G09F 9/30 (2013.01); G09G 3/3677 (2013.01); G09G 3/3688 (2013.01); H01L 21/3205 (2013.01); H01L 21/768 (2013.01); H01L 23/522 (2013.01); H01L 23/532 (2013.01); H01L 27/124 (2013.01); H01L 27/1244 (2013.01); H01L 27/1255 (2013.01); H01L 29/4908 (2013.01); G02F 1/136259 (2013.01); G02F 2001/13629 (2013.01); G02F 2001/136295 (2013.01); G02F 2202/28 (2013.01); G09G 2300/0426 (2013.01); G09G 2310/0202 (2013.01); H01L 2924/0002 (2013.01);
Abstract

There are provided a display device including a highly reliable wiring having excellent adhesion to an insulating film, and a method for manufacturing the same. A molybdenum-niobium layer has good adhesion to an insulating film, and thus, a first wiring having the molybdenum-niobium layer as an upper layer wiring is tightly adhered to a gate insulating film which is formed on the surface of the upper layer wiring. When there is a need to exchange a semiconductor chip mounted on a connection terminal that is provided at an end portion of a wiring such as a gate lead line or a source lead line formed of the first wiring, an ACF which was used for pressure-bonding of the semiconductor chip remains on the connection terminal even if the semiconductor chip is peeled off. To thoroughly remove the ACF, a force has to be applied to the connection terminal, but because the gate insulating film is tightly adhered to the molybdenum-niobium layer, the gate insulating film protecting the periphery of the connection terminal is not easily peeled off.


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