The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2019

Filed:

Jan. 25, 2013
Applicant:

Lawrence Livermore National Security, Llc, Livermore, CA (US);

Inventors:

Christopher Stolz, Lathrop, CA (US);

Jim Folta, Livermore, CA (US);

Paul B. Mirkarimi, Danville, CA (US);

Regina Soufli, Berkeley, CA (US);

Christopher C. Walton, Oakland, CA (US);

Justin Wolfe, Modesto, CA (US);

Carmen Menoni, Fort Collins, CO (US);

Dinesh Patel, Fort Collins, CO (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); G02B 3/00 (2006.01); C23C 14/08 (2006.01); C03C 17/34 (2006.01); C23F 4/00 (2006.01);
U.S. Cl.
CPC ...
G02B 3/00 (2013.01); C03C 17/3417 (2013.01); C23C 14/08 (2013.01); C23C 14/34 (2013.01); C23C 14/3442 (2013.01); C23F 4/00 (2013.01); C03C 2218/33 (2013.01); Y10T 428/265 (2015.01);
Abstract

Planarization of defects in laser mirror and other optical component manufacture is disclosed. The planarization is performed by first depositing a relatively thick planarization layer, then carrying out a sequential deposition and etch process. The technique takes advantage of the non-uniform material removal rate as a function of etchant incident angle, and effectively buries the inclusion in a thick film with a near planar top surface. The process enables faster, more reliable manufacture of a non-defective high fluence multilayer mirror particularly suitable for high energy laser applications.


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