The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2019
Filed:
May. 31, 2017
Board of Regents, the University of Texas System, Austin, TX (US);
Deji Akinwande, Austin, TX (US);
Seyedeh Maryam Mortazavi Zanjani, Austin, TX (US);
Mir Mohammad Sadeghi, Austin, TX (US);
Milo Holt, Pflugerville, TX (US);
Board of Regents, The University of Texas System, Austin, TX (US);
Abstract
The integration of monolayer graphene with a semiconductor device for gas sensing applications involves obtaining a CMOS device that is prepared to receive monolayer graphene channels. After population of the monolayer graphene channels on the CMOS device, electrical contacts are formed at each end of the monolayer graphene channels with interconnect vias having sidewalls angled at less then 90°. Additional metallization pads are added at the location of the monolayer graphene channels to improve planarity and reliability of the semiconductor processing involved.