The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2019

Filed:

Aug. 25, 2014
Applicant:

Toyo Kohan Co., Ltd., Chiyoda-ku, Tokyo, JP;

Inventors:

Yusuke Hashimoto, Kudamatsu, JP;

Teppei Kurokawa, Kudamatsu, JP;

Takashi Koshiro, Kudamatsu, JP;

Hironao Okayama, Kudamatsu, JP;

Tatsuoki Nagaishi, Osaka, JP;

Kotaro Ohki, Osaka, JP;

Genki Honda, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/35 (2006.01); C30B 29/16 (2006.01); C23C 14/08 (2006.01); C30B 23/02 (2006.01); H01L 39/24 (2006.01); C23C 14/54 (2006.01); C23C 28/00 (2006.01); C30B 29/22 (2006.01);
U.S. Cl.
CPC ...
C23C 14/35 (2013.01); C23C 14/08 (2013.01); C23C 14/083 (2013.01); C23C 14/541 (2013.01); C23C 28/321 (2013.01); C23C 28/322 (2013.01); C23C 28/3455 (2013.01); C30B 23/02 (2013.01); C30B 29/16 (2013.01); H01L 39/2461 (2013.01); C30B 29/22 (2013.01);
Abstract

This invention provides a method for forming an oxide layer on a metal substrate, which enables manufacture of an oxide layer with improved crystal orientation in comparison with that of the outermost layer of a metal substrate. The method for forming an oxide layer on a metal substratevia RF magnetron sputtering comprises a step of subjecting the crystal-oriented metal substrateexhibiting a c-axis orientation of 99% on its outermost layer to RF magnetron sputtering while adjusting the angle α formed by a perpendicular at a film formation positionon the metal substrateand a line from the film formation positionto a pointat which the perpendicular magnetic flux density is zero on the targetlocated at the position nearest to the film formation positionto 15 degrees or less.


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