The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2019
Filed:
Aug. 24, 2010
Andrew B. Greytak, Columbia, SC (US);
Wenhao Liu, Somerville, MA (US);
Peter M. Allen, Cambridge, MA (US);
Moungi G. Bawendi, Cambridge, MA (US);
Daniel G. Nocera, Winchester, MA (US);
Andrew B. Greytak, Columbia, SC (US);
Wenhao Liu, Somerville, MA (US);
Peter M. Allen, Cambridge, MA (US);
Moungi G. Bawendi, Cambridge, MA (US);
Daniel G. Nocera, Winchester, MA (US);
MASSACHUSETTS INSTITUTE OF TECHNOLOGY, Cambridge, MA (US);
Abstract
A semiconductor nanocrystal can have a photoluminescent quantum yield of at least 90%, at least 95%, or at least 98%. The nanocrystal can be made by sequentially contacting a nanocrystal core with an M-containing compound and an X donor, where at least one of the M-containing compound and the X donor is substoichiometric with respect to forming a monolayer on the nanocrystal core.