The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2019
Filed:
Oct. 11, 2017
Applicant:
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Inventors:
Masaki Ohashi, Joetsu, JP;
Takayuki Fujiwara, Joetsu, JP;
Ryosuke Taniguchi, Joetsu, JP;
Kazuya Honda, Joetsu, JP;
Takahiro Suzuki, Joetsu, JP;
Assignee:
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); C07C 381/12 (2006.01); H01L 21/027 (2006.01); C08F 220/18 (2006.01); C08F 220/38 (2006.01); G03F 7/20 (2006.01); C08F 220/24 (2006.01); G03F 7/26 (2006.01); C07C 317/04 (2006.01); C07C 317/28 (2006.01); C08K 5/36 (2006.01); G03F 7/033 (2006.01); G03F 7/32 (2006.01); C08L 33/08 (2006.01); C08L 33/10 (2006.01); C08L 33/16 (2006.01); G01R 33/46 (2006.01);
U.S. Cl.
CPC ...
C07C 381/12 (2013.01); C07C 317/04 (2013.01); C07C 317/28 (2013.01); C08F 220/18 (2013.01); C08F 220/24 (2013.01); C08F 220/38 (2013.01); C08K 5/36 (2013.01); G03F 7/0045 (2013.01); G03F 7/033 (2013.01); G03F 7/2004 (2013.01); G03F 7/2041 (2013.01); G03F 7/26 (2013.01); G03F 7/322 (2013.01); H01L 21/0274 (2013.01); C07C 2602/42 (2017.05); C07C 2603/74 (2017.05); C08L 33/08 (2013.01); C08L 33/10 (2013.01); C08L 33/16 (2013.01); G01R 33/46 (2013.01);
Abstract
A sulfonium compound having formula (1) is provided wherein R, Rand Rare a C-Cmonovalent hydrocarbon group which may contain a heteroatom, p=0-5, q=0-5, and r=0-4. A resist composition comprising the sulfonium compound is processed by lithography to form a resist pattern with improved LWR and pattern collapse.