The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
Dec. 22, 2017
Omnivision Technologies, Inc., Santa Clara, CA (US);
Hiroaki Ebihara, San Jose, CA (US);
Xueqing Wang, Milpitas, CA (US);
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
A photodiode is adapted to accumulate image charges. A transfer transistor transfers the image charges to the floating diffusion. A source follower transistor is coupled to receive the voltage of the floating diffusion and provide an amplified signal. A row select transistor enables the amplified signal and outputs the amplified signal to a bitline. A first current source generator is coupled between the bitline and a ground. The first current source generator sinks current through a first cascode transistor, a first bias transistor and a second bias transistor. The first cascode transistor is biased by a cascode control voltage. The first bias transistor and the second bias transistor are biased by a bias control voltage.