The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
Jan. 27, 2017
Applicant:
Novaled Gmbh, Dresden, DE;
Inventors:
Hans Kleemann, Dresden, DE;
Gregor Schwartz, Dresden, DE;
Assignee:
Novaled GmbH, Dresden, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 51/10 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 51/057 (2013.01); H01L 51/0016 (2013.01); H01L 51/0017 (2013.01); H01L 51/105 (2013.01); H01L 51/0004 (2013.01);
Abstract
The invention relates to a method for producing a vertical organic field-effect transistor, in which a vertical organic field-effect transistor with a layer arrangement is produced on a substrate, said layer arrangement including transistor electrodes, namely a first electrode (), a second electrode () and a third electrode (), electrically insulating layers () and an organic semiconductor layer (). In addition, a vertical organic field-effect transistor is provided, which includes a layer arrangement with transistor electrodes on a substrate ().