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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10170694 B1

PDFFull Text
Date of Patent:
Jan. 01, 2019

Filed:

Mar. 05, 2018

Magnetic memory

Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Satoshi Shirotori, Yokohama, JP;

Yuichi Ohsawa, Yokohama, JP;

Hideyuki Sugiyama, Kawasaki, JP;

Mariko Shimizu, Nerima, JP;

Altansargai Buyandalai, Kawasaki, JP;

Naoharu Shimomura, Meguro, JP;

Katsuhiko Koui, Yokohama, JP;

Tomoaki Inokuchi, Yokohama, JP;

Hiroaki Yoda, Kawasaki, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Jaehwan Oh

Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/08 (2006.01); G11C 11/16 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); G11C 11/161 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

A magnetic memory of an embodiment includes: a first conductive layer, which is nonmagnetic and includes at least a first element, the first conductive layer including a first to fifth regions; a first magnetoresistive element disposed corresponding to the third region and including a first magnetic layer, a second magnetic layer including at least a second element, a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, a second nonmagnetic layer disposed between the second magnetic layer and the first nonmagnetic layer and including at least a third element, and a third magnetic layer disposed between the second nonmagnetic layer and the first nonmagnetic layer; a second conductive layer disposed corresponding to the second region and including at least the first to third elements; and a third conductive layer disposed corresponding to the fourth region, and including at least the first to third elements.

Find Patent Forward Citations

Shirotori, Satoshi. (2019). Magnetic memory (U.S. Patent No. 10170694). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10170694

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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