The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
Dec. 21, 2016
Applicant:
Imec Vzw, Leuven, BE;
Inventors:
Assignee:
IMEC vzw, Leuven, BE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); H01L 43/12 (2013.01); H01L 43/02 (2013.01);
Abstract
The disclosed technology generally relates to semiconductor devices and more particularly to semiconductor devices having an integrated magnetic tunnel junction (MTJ), and relates to methods of fabricating the semiconductor devices. In one aspect, a semiconductor device includes a stack including successive layers of: a first metallization layer, a first dielectric layer, a second metallization layer, a second dielectric layer, and a third metallization layer. A magnetic tunnel junction (MTJ) device is formed in the first dielectric layer and in the second metallization layer and electrically connected to a first metallization layer and the third metallization layer.